STILLINGER-WEBER TYPE POTENTIALS IN MONTE-CARLO SIMULATION OF AMORPHOUS-SILICON

DERELI G.

MOLECULAR SIMULATION, vol.8, no.6, pp.351-360, 1992 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 8 Issue: 6
  • Publication Date: 1992
  • Doi Number: 10.1080/08927029208022490
  • Journal Name: MOLECULAR SIMULATION
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.351-360
  • Middle East Technical University Affiliated: No

Abstract

The growth of amorphous silicon on a substrate of a two-layer slab of crystalline silicon with various surface indices is simulated with Stillinger-Weber type interatomic potentials. The growth is realized by means of a continuum Monte Carlo method and the radial distribution functions are evaluated for various cases.