Second harmonic generation in an asymmetric rectangular quantum well under hydrostatic pressure

Karabulut I., Atav U., Safak H., Tomak M.

PHYSICA B-CONDENSED MATTER, cilt.393, ss.133-138, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 393
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.physb.2006.12.074
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.133-138
  • Anahtar Kelimeler: quantum wells, electronic states, nonlinear optics, APPLIED ELECTRIC-FIELD, NONLINEAR-OPTICAL SUSCEPTIBILITY, BAND-STRUCTURE, DONOR IMPURITY, BINDING-ENERGY, GAAS, RECTIFICATION, ABSORPTION, STATES, TRANSITIONS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The effects of structure parameters and hydrostatic pressure oil the electronic states and the second harmonic generation (SHG) susceptibility of asymmetric rectangular quantum Well (ARQW) are studied. The asymmetry of the potential can be controlled by changing the structural parameters and this adjustable asymmetry is important for optimizing the SHG susceptibility. We have calculated analytically the electronic states in ARQW within the framework of the envelope function approach. Numerical results for Al-x/Ga1-x/As/GaAs/AlxrGa1-xr. As quantum well are presented. The results obtained show that the hydrostatic pressure and the structure parameters of ARQW significantly influence the SHG susceptibility. This behavior in the SHG susceptibility gives a new degree of freedom in regions of interest for device applications. (c) 2007 Elsevier B.V. All rights reserved.