ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE


KATIRCIOGLU S. , ERKOC S.

SURFACE SCIENCE, cilt.311, 1994 (SCI İndekslerine Giren Dergi) identifier identifier

Özet

We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.