ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE


KATIRCIOGLU S. , ERKOC S.

SURFACE SCIENCE, vol.311, no.3, 1994 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Letter
  • Volume: 311 Issue: 3
  • Publication Date: 1994
  • Doi Number: 10.1016/0039-6028(94)91412-5
  • Title of Journal : SURFACE SCIENCE

Abstract

We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.