Nanosecond IR Laser-Assisted Selective 3D Etching of Silicon for Photovoltaics

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Akhtaryarazar D., Kadan V., DADASHİ K., Demirbas K., BEK A., Borra M. Z., ...More

2025 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2025, Munich, Germany, 23 - 27 June 2025, (Full Text)

• Publication Type: Conference Paper / Full Text
• Doi Number: 10.1109/cleo/europe-eqec65582.2025.11110232
• City: Munich
• Country: Germany
• Middle East Technical University Affiliated: Yes

Abstract

Selective etching of laser-modified silicon (Si) enables 3D micro-sculpturing, offering new opportunities for photovoltaic (PV) applications. This technique facilitates high-aspect-ratio microstructures for light trapping in solar cells, photon management in photodetectors, and MEMS fabrication. We optimize selective wet-chemical etching of crystalline silicon (c-Si) modified by an infrared (IR) nanosecond (ns) laser, achieving high selectivity and controlled etching rates [1]. Additionally, we ensure complete removal of defected regions, producing a smooth, damage-free surface, crucial for PV applications requiring long carrier lifetimes.