Nanosecond IR Laser-Assisted Selective 3D Etching of Silicon for Photovoltaics

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Akhtaryarazar D., Kadan V., DADASHİ K., Demirbas K., BEK A., Borra M. Z., ...Daha Fazla

2025 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2025, Munich, Almanya, 23 - 27 Haziran 2025, (Tam Metin Bildiri)

• Yayın Türü: Bildiri / Tam Metin Bildiri
• Doi Numarası: 10.1109/cleo/europe-eqec65582.2025.11110232
• Basıldığı Şehir: Munich
• Basıldığı Ülke: Almanya
• Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Selective etching of laser-modified silicon (Si) enables 3D micro-sculpturing, offering new opportunities for photovoltaic (PV) applications. This technique facilitates high-aspect-ratio microstructures for light trapping in solar cells, photon management in photodetectors, and MEMS fabrication. We optimize selective wet-chemical etching of crystalline silicon (c-Si) modified by an infrared (IR) nanosecond (ns) laser, achieving high selectivity and controlled etching rates [1]. Additionally, we ensure complete removal of defected regions, producing a smooth, damage-free surface, crucial for PV applications requiring long carrier lifetimes.