Dark conduction mechanisms of PTQBDT based heterojunction diode


Gullu H. H., Yildiz D. E., Hacioglu S. O., ÇIRPAN A., TOPPARE L. K.

PHYSICA SCRIPTA, vol.98, no.1, 2023 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 98 Issue: 1
  • Publication Date: 2023
  • Doi Number: 10.1088/1402-4896/aca727
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Keywords: polymer, thin film, spin-coating, heterojunction, elektrical characterization, SCHOTTKY-BARRIER DIODES, CURRENT-VOLTAGE, SERIES RESISTANCE, POOLE-FRENKEL, CURRENT TRANSPORT, INSULATOR LAYER, I-V, SI, PARAMETERS, POLYMERS
  • Middle East Technical University Affiliated: Yes

Abstract

Al:LiF/PTQBT:PCBM/PEDOT:PSS/ITO/glass organic-based diode is fabricated with different weight ratios in PTQBT:PCBM active layer. The diodes D1, D2 and D3 are prepared using the precursor solution for spin coating process as 1:2, 1:3 and 1:4, respectively. Under dark, main diode parameters are extracted by conventional thermionic emission theory using the results of measurements. Parasitic resistance contribution, non-ideal barrier height formation and high values of ideality factor indicate possible effects of space charge limited current flow mechanism on forward biased characteristics. At saturated voltage region, series resistances are calculated and the results are evaluated according to Cheung's method. The possible voltage sharing between interface layer and depletion region are also investigated by analysis of density of interface states. In addition, field effect is found in a major role on the reverse current flow and the mechanism is evaluated according to Schottky-Richardson model.