2-D analysis of Ge implanted SiO(2) surfaces by laser-induced breakdown spectroscopy

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Yalcin S., Oerer S., TURAN R.

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, vol.63, no.10, pp.1130-1138, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 63 Issue: 10
  • Publication Date: 2008
  • Doi Number: 10.1016/j.sab.2008.09.002
  • Page Numbers: pp.1130-1138
  • Keywords: Surface analysis, Ion implantation, Lateral resolution, Laser-induced breakdown spectroscopy, SCANNING MICROANALYSIS, SPECTROMETRY, ABLATION, SAMPLES, ALLOYS, TOOL


2-D elemental distribution of Ge in silicon oxide substrates with differing implantation doses of between 3x10(16) cm(-2) and 1.5x10(17) cm(-2) has been investigated by Laser-induced Breakdown Spectroscopy (LIBS). Spectral emission intensity has been optimized with respect to time, crater size, ablation depth and laser energy. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) coupled with Energy-Dispersive X-Ray Spectroscopy (EDX) have been utilized to obtain crater depth, morphology and elemental composition of the sample material, respectively. LIBS spectral data revealed the possibility of performing 2-D distribution analysis of Ge atoms in silicon oxide substrate. EDX analysis results confirmed that LIBS is capable to detect Ge atoms at concentrations lower than 0.2% (atomic). LIBS as a fast semi-quantitative analysis method with 50 mu m lateral and 800 nm depth resolution has been evaluated. Results illustrate the potential use of LIBS for rapid, on-line assessment of the quality of advanced technology materials during the manufacturing process. (C) 2008 Elsevier B.V. All rights reserved.