Oxygen-doped c-BN(110) surface: DFT calculations


Creative Commons License

KÖKTEN H., ERKOÇ Ş.

11th Europhysical Conference on Defects in Insulating Materials (EURODIM), Pecs, Hungary, 12 - 16 July 2010, vol.15 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 15
  • Doi Number: 10.1088/1757-899x/15/1/012075
  • City: Pecs
  • Country: Hungary
  • Middle East Technical University Affiliated: Yes

Abstract

Density functional theory calculations have been performed to investigate the structural and electronic properties for both unrelaxed and relaxed cases of oxygen-doped c-BN(110) surface. Oxygen atom has been substituted in a neutral charge state on both the B site (O-B) and the N site (O-N). Defect formation energies, [unrelaxed (E-f(o)) and relaxed (E-f)], and relaxation energies, E-r, have been calculated. It has been found that substitution O-N is more probable, moreover the O-N causes an inward relaxation of the first neighbor surface B atom.