Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation

Aktas S., Okan S., Erdogan I., Akbas H., Tomak M.

SUPERLATTICES AND MICROSTRUCTURES, cilt.28, sa.3, ss.165-169, 2000 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 28 Sayı: 3
  • Basım Tarihi: 2000
  • Doi Numarası: 10.1006/spmi.2000.0899
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.165-169
  • Anahtar Kelimeler: GaAs/GaxAl1-xAs, donor, strong confinement, EFFECTIVE-MASS, D CENTERS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved by using a two-parameter trial wavefunction, and by including the conduction band nonparabolicity. It is shown that the method used gives results in agreement with those obtained in the experiments on the effective mass and the donor binding energy, both of which are strongly dependent on the well width. (C) 2000 Academic Press.