Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides

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Saeidi S., Rasekh P., Awan K. M., Tugen A., Huttunen M. J., Dolgaleva K.

OPTICAL MATERIALS, vol.84, pp.524-530, 2018 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 84
  • Publication Date: 2018
  • Doi Number: 10.1016/j.optmat.2018.07.037
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.524-530
  • Keywords: Optical devices, Nonlinear optics, Integrated optics, SELF-PHASE MODULATION, WAVELENGTH CONVERSION, 2-PHOTON ABSORPTION, SILICON, ALGAAS
  • Middle East Technical University Affiliated: Yes


We report on the study of the third-order nonlinear optical interactions in InxGa1-xAsyP1-y/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear absorption measurements at the pump wavelength 1568 nm in our waveguides. The nonlinear phase shift of up to 2.5 pi has been observed in self-phase modulation experiments. The measured value of the two-photon absorption coefficient alpha(2) was 19 cm/GW. The four-wave mixing conversion range, representing the wavelength difference between maximally separated signal and idler spectral components, was observed to be 45 nm. Our results indicate that InGaAsP has a high potential as a material platform for nonlinear photonic devices, provided that the operation wavelength range outside the two-photon absorption window is selected.