Water adsorption on the stepped Si(110) surface

Katircioglu S., Erkoc S.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.196, sa.1, ss.77-84, 1996 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 196 Sayı: 1
  • Basım Tarihi: 1996
  • Doi Numarası: 10.1002/pssb.2221960109
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.77-84
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculations have been performed by using the empirical tight-binding method. Two types of adsorption model of water on a single layer stepped Si(110) surface have been considered, one of them is the dissociative type (H, OH) and the other one is the molecular type (H2O). The total electronic energy and TDOS calculations lead to a dissociative type of water adsorption on the stepped Si(110) surface excluding the molecular type as it was found on the flat Si(110) surface.