Water adsorption on the stepped Si(110) surface


Katircioglu S. , Erkoc S.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.196, ss.77-84, 1996 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 196 Konu: 1
  • Basım Tarihi: 1996
  • Doi Numarası: 10.1002/pssb.2221960109
  • Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
  • Sayfa Sayıları: ss.77-84

Özet

We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculations have been performed by using the empirical tight-binding method. Two types of adsorption model of water on a single layer stepped Si(110) surface have been considered, one of them is the dissociative type (H, OH) and the other one is the molecular type (H2O). The total electronic energy and TDOS calculations lead to a dissociative type of water adsorption on the stepped Si(110) surface excluding the molecular type as it was found on the flat Si(110) surface.