Decomposition of SiH4 on the S-A type stepped Si(100) surface

Katircioglu S., Erkoc S.

SURFACE REVIEW AND LETTERS, cilt.9, ss.1401-1407, 2002 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 9
  • Basım Tarihi: 2002
  • Doi Numarası: 10.1142/s0218625x02003901
  • Dergi Adı: SURFACE REVIEW AND LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1401-1407
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The density functional theory method is used to explore the mechanism of dissociative adsorption of silane (SiH4) on the S-A type stepped Si(100) surface. Two reaction paths are described that produce silyl (Sills) and hydrogen atom fragments adsorbed on the dimer bonds present on each terrace. It has been found that the initial stage of the dissociation of SiH4 on the SA type stepped Si(100) surface shows similarity to the dissociation of SiH4 on the flat Si(100) surface; SiH3 and hydrogen fragments bond to the Si dimer atoms by following the first reaction path.