Akademik Veri Yönetim Sistemi
ACS Applied Energy Materials, cilt.8, sa.12, ss.7912-7918, 2025 (SCI-Expanded, Scopus)
Thin films of hole-selective molybdenum oxide (MoOx) offer the possibility of realizing efficient crystalline silicon (c-Si) solar cells. This study presents the feasibility of utilizing local MoOx with silver (Ag) at the rear of industrial passivated emitter and rear contact (PERC) solar cells. MoOx thin films with different thicknesses were deposited by thermal evaporation at room temperature. MoOx exhibits a large work function inducing strong accumulation at the interface with p-type c-Si, which allows only holes to transport and simultaneously suppress the contact resistivity (ρc) and interfacial recombination current density (J0). State-of-the-art industrial fabrication tools and processing steps were utilized to realize the PERC/MoOx solar cells. The best device performance was attained by 5 nm MoOx, demonstrating a remarkably high efficiency (η) exceeding 21.5% on 225 cm2 solar cells with an impressive Voc of 672.3 mV, Jsc of 39.7 mA/cm2, and FF of 80.66%. These results are recorded for MoOx on PERC solar cells prepared using industrial precursors and are expected to contribute to the development of high-efficiency solar cells with simpler fabrication methods.