RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE

ALLAHVERDI K., BABAEV S., ELLIALTIOGLU S., ISMAILOV A.

SOLID STATE COMMUNICATIONS, vol.87, no.8, pp.675-678, 1993 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 87 Issue: 8
  • Publication Date: 1993
  • Doi Number: 10.1016/0038-1098(93)90204-z
  • Journal Name: SOLID STATE COMMUNICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.675-678
  • Middle East Technical University Affiliated: Yes

Abstract

Experimental results of Raman scattering spectra of epsilon-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Gruneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for epsilon-InSe and epsilon-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space.