RAMAN-SCATTERING IN LAYER INDIUM SELENIDE UNDER PRESSURE


ALLAHVERDI K., BABAEV S., ELLIALTIOGLU S. , ISMAILOV A.

SOLID STATE COMMUNICATIONS, cilt.87, ss.675-678, 1993 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 87 Konu: 8
  • Basım Tarihi: 1993
  • Doi Numarası: 10.1016/0038-1098(93)90204-z
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Sayfa Sayıları: ss.675-678

Özet

Experimental results of Raman scattering spectra of epsilon-InSe crystals are presented at 300 K and pressures up to 10.2 kbar. Values of the mode-Gruneisen parameters were calculated using frequency-pressure dependences for five observed phonons. Changes of the shear force constants under pressure were analysed using linear-chain model both for epsilon-InSe and epsilon-GaSe crystals. The decrease of the shear force constants between metallic planes with increasing pressure are explained qualitatively by charge transfer from intralayer to interlayer space.