ELECTRONIC STATES OF INSE GASE SUPERLATTICE


ERKOC S. , ALLAHVERDI K., IBRAHIM Z.

SOLID STATE COMMUNICATIONS, vol.90, no.9, pp.553-556, 1994 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 90 Issue: 9
  • Publication Date: 1994
  • Doi Number: 10.1016/0038-1098(94)90119-8
  • Title of Journal : SOLID STATE COMMUNICATIONS
  • Page Numbers: pp.553-556

Abstract

Analysis of recent publications revealed an increasing interest in epitaxial growth of InSe/GaSe superlattice. Within the effective mass theory we carried out self-consistent calculations of the confined and itinerant electronic states, potential profile and charge density distribution of InSe/GaSe superlattice, where the InSe layers are the well and the GaSe layers the barrier. Calculations were performed for three types of doping: uniform, modulated in the well, and modulated in the barrier. It has been found that the Coulomb interaction in the well and barrier forces the formation of localized states in the barrier region. The possibility of an insulator-metal transition in InSe/GaSe superlattice is predicted for modulation doping in the barrier and for a doping level n = 10(19) cm-3. A decrease of the barrier height has been found for modulation doping in the well.