Energy transfer and stimulated emission dynamics at 1.1 mu m in Nd-doped SiNx

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Li R., Yerci S., Kucheyev S. O., van Buuren T., Dal Negro L.

OPTICS EXPRESS, vol.19, no.6, pp.5379-5385, 2011 (SCI-Expanded) identifier identifier identifier

  • Publication Type: Article / Article
  • Volume: 19 Issue: 6
  • Publication Date: 2011
  • Doi Number: 10.1364/oe.19.005379
  • Journal Name: OPTICS EXPRESS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5379-5385
  • Middle East Technical University Affiliated: No

Abstract

Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 mu m emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 mu m was demonstrated due to stimulated emission at the whispering gallery resonant modes. These results provide an alternative approach for the engineering of Si-based optical amplifiers and lasers on a silicon nitride materials platform. (C) 2011 Optical Society of America