Energy transfer and stimulated emission dynamics at 1.1 mu m in Nd-doped SiNx

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Li R., Yerci S. , Kucheyev S. O. , van Buuren T., Dal Negro L.

OPTICS EXPRESS, cilt.19, ss.5379-5385, 2011 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Cilt numarası: 19 Konu: 6
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1364/oe.19.005379
  • Sayfa Sayıları: ss.5379-5385


Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 mu m emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 mu m was demonstrated due to stimulated emission at the whispering gallery resonant modes. These results provide an alternative approach for the engineering of Si-based optical amplifiers and lasers on a silicon nitride materials platform. (C) 2011 Optical Society of America