Photoluminescence spectra of nitrogen implanted GaSe crystals

KARABULUT M. A., Bilir G., Mamedov G. M., Seyhan A., TURAN R.

JOURNAL OF LUMINESCENCE, cilt.128, sa.10, ss.1551-1555, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 128 Sayı: 10
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.jlumin.2008.02.014
  • Dergi Adı: JOURNAL OF LUMINESCENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1551-1555
  • Anahtar Kelimeler: GaSe, N implantation, Bridgman, exciton photoluminescence, GALLIUM SELENIDE, SINGLE-CRYSTAL, EXCITON PHOTOCONDUCTIVITY, SEMICONDUCTOR GASE, INSE
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

GaSe single crystals were N-implanted along c-axis with ion beams of 10(14) and 10(16) ions/cm(2) doses having energy values of 60 and 100 keV. The photoluminescence (PL) spectra of undoped and N-implanted GaSe crystals were measured at different temperatures. The PL intensity was observed to decrease with increasing implantation dose while the FWHM of the exciton peaks increased. In heavily doped crystals, due to the interaction with the radiation induced disorders, the wave vector selection rules are satisfied and an indirect exciton PL band is observed 36 meV below the direct exciton states. (C) 2008 Elsevier B.V. All rights reserved.