Photoluminescence spectra of nitrogen implanted GaSe crystals


KARABULUT M. A. , Bilir G., Mamedov G. M. , Seyhan A., TURAN R.

JOURNAL OF LUMINESCENCE, cilt.128, sa.10, ss.1551-1555, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 128 Konu: 10
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.jlumin.2008.02.014
  • Dergi Adı: JOURNAL OF LUMINESCENCE
  • Sayfa Sayıları: ss.1551-1555

Özet

GaSe single crystals were N-implanted along c-axis with ion beams of 10(14) and 10(16) ions/cm(2) doses having energy values of 60 and 100 keV. The photoluminescence (PL) spectra of undoped and N-implanted GaSe crystals were measured at different temperatures. The PL intensity was observed to decrease with increasing implantation dose while the FWHM of the exciton peaks increased. In heavily doped crystals, due to the interaction with the radiation induced disorders, the wave vector selection rules are satisfied and an indirect exciton PL band is observed 36 meV below the direct exciton states. (C) 2008 Elsevier B.V. All rights reserved.