Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

ÖZDEMİR O., Anutgan M., Aliyeva-Anutgan T., Atilgan I., Katircioglu B.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.475, pp.794-803, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 475
  • Publication Date: 2009
  • Doi Number: 10.1016/j.jallcom.2008.08.014
  • Journal Name: JOURNAL OF ALLOYS AND COMPOUNDS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.794-803
  • Middle East Technical University Affiliated: Yes

Abstract

Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen deficient turbostratic structure where more or less parallel hexagonal crystallites of distributed size would be embedded in a disordered phase. The nitrogen deficiency of the film was tried to be restored by annealing treatment under nitrogen atmosphere at two temperatures. (C) 2008 Elsevier B.V. All rights reserved.