Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

ÖZDEMİR O., Anutgan M., Aliyeva-Anutgan T., Atilgan I., Katircioglu B.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.475, ss.794-803, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 475
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.jallcom.2008.08.014
  • Sayfa Sayıları: ss.794-803


Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen deficient turbostratic structure where more or less parallel hexagonal crystallites of distributed size would be embedded in a disordered phase. The nitrogen deficiency of the film was tried to be restored by annealing treatment under nitrogen atmosphere at two temperatures. (C) 2008 Elsevier B.V. All rights reserved.