Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements
JOURNAL OF ALLOYS AND COMPOUNDS, cilt.475, ss.794-803, 2009 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 475
- Basım Tarihi: 2009
- Doi Numarası: 10.1016/j.jallcom.2008.08.014
- Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.794-803
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen deficient turbostratic structure where more or less parallel hexagonal crystallites of distributed size would be embedded in a disordered phase. The nitrogen deficiency of the film was tried to be restored by annealing treatment under nitrogen atmosphere at two temperatures. (C) 2008 Elsevier B.V. All rights reserved.