In Situ Fluorine Doping of FZO Films by Atomic Layer Deposition
ACS OMEGA, cilt.1, sa.1, ss.1-25, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 1 Sayı: 1
- Basım Tarihi: 2026
- Doi Numarası: 10.1021/acsomega.5c10192
- Dergi Adı: ACS OMEGA
- Derginin Tarandığı İndeksler: Scopus, Science Citation Index Expanded (SCI-EXPANDED), Chemical Abstracts Core, Directory of Open Access Journals
- Sayfa Sayıları: ss.1-25
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
In optoelectronic devices, fluorine-doped semiconductors have been used widely. Atomic layer deposition (ALD) is one of the main processes integrated into semiconductor manufacturing and a perfect candidate to obtain conformally covered films for complex geometries at low temperatures on a budget. Due to the lack of a proper fluorine source, fluorine doping with ALD has been a challenge. In this study, fluorine-doped ZnO (FZO) thin films by ALD were successfully achieved, demonstrating the efficiency and practicality of a new homemade precursor mixture: ammonium fluoride/water (NH4F/DI) solution. The fluorine incorporation mechanism was investigated and discussed in detail with respect to growth conditions. The effects of ALD growth temperature (160−200 °C), canister temperature (RT, 40 °C, and 50 °C), and concentration of NH4F/DI water mixture (20−40%) on fluorine doping, crystallinity, atomic-scale interactions, and electrical and optical properties were investigated. For the fluorine doping conditions identified as 180 °C growth temperature with a 30% NH4F/DI water mixture and a 40 °C canister temperature, a fluorine incorporation of 2.62 at. % F was achieved.