Akademik Veri Yönetim Sistemi
Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji, cilt.11, sa.3, ss.867-884, 2023 (Hakemli Dergi)
The mechanism behind n-type conductivity of undoped ZnO films are not understood well. One
and two dimensional defects (grain boundaries, dislocations), and zero dimensional
stoichiometric point defects (vacancies, self-interstitials and impurities) play a crucial role in
determining the electrical properties of ZnO. All defect mechanisms are strongly controlled by
the growth method and conditions. While it is more straightforward examining the one and two
dimensional defects, measuring and unveiling the mechanism behind the zero dimensional point
defect contribution and their sole effect on the electrical properties are challenging. This is why
there has been controversial discussion of results among experimental and computational works
relating physical and chemical properties of ZnO to sustainable electrical properties. In this study,
to correlate the dynamics in between structural and electrical properties of ZnO grown by thermal
atomic layer deposition (ALD); growth temperature, DEZ and DI water precursor pulse times,
DEZ/DI water precursor pulse ratio, and N2 purge time were varied. To obtain growth condition
specific structural and electrical properties; XRD, AFM, profilometer, ellipsometry,
XPS/CasaXPS, UV-VIS spectrometer, Hall-Effect measurements were utilized. Although, there
was no strong correlation for oxygen vacancies, the contribution of hydrogen impurities, zinc
interstitials and oxygen vacancies to conductivity was observed at different growth conditions.
Lowest resistivity and highest average % transmittance were obtained as 6.8x10-3 ohm.cm and
92% in visible spectrum (380-700 nm), respectively.