Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors


Li F. M. , Hsieh G., Dalal S., Newton M. C. , Stott J. E. , Hiralal P., ...Daha Fazla

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.55, sa.11, ss.3001-3011, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 55 Konu: 11
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1109/ted.2008.2005180
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Sayfa Sayıları: ss.3001-3011

Özet

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C-61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm(2)V(-1)s(-1), representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10(6) at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.