The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells

Okan, SE; Aktas, S; Akbas, H; Tomak, MEHMET

doi:10.1002/(sici)1521-3951(199904)212:2<263::aid-pssb263>3.0.co;2-v

The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells

Atıf İçin Kopyala

Okan S., Aktas S., Akbas H., Tomak M.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.212, sa.2, ss.263-270, 1999 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 212 Sayı: 2
Basım Tarihi: 1999
Doi Numarası: 10.1002/(sici)1521-3951(199904)212:2<263::aid-pssb263>3.0.co;2-v
Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.263-270
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The exciton transition energies between valence and conduction subbands of symmetric double quantum wells are studied. To study the effect of geometry coupled wells of rectangular, graded and parabolic shapes are considered. A special emphasis is given to the study of crossover between the symmetric light-hole (e1-11) and the antisymmetric heavy-hole (e2-h2) transitions.