Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells

Rudin S., Garrett G. A., Shen H., Wraback M., Imer B., Haskell B., ...More

28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria, 24 - 28 July 2006, vol.893, pp.315-316 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 893
  • Doi Number: 10.1063/1.2729894
  • City: Vienna
  • Country: Austria
  • Page Numbers: pp.315-316
  • Middle East Technical University Affiliated: No


We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.