Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells

Rudin S., Garrett G. A., Shen H., Wraback M., Imer B., Haskell B., ...Daha Fazla

28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Avusturya, 24 - 28 Temmuz 2006, cilt.893, ss.315-316 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 893
  • Doi Numarası: 10.1063/1.2729894
  • Basıldığı Şehir: Vienna
  • Basıldığı Ülke: Avusturya
  • Sayfa Sayıları: ss.315-316
  • Orta Doğu Teknik Üniversitesi Adresli: Hayır

Özet

We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.