28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria, 24 - 28 July 2006, vol.893, pp.315-316
We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.