Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells
28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Avusturya, 24 - 28 Temmuz 2006, cilt.893, ss.315-316, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 893
- Doi Numarası: 10.1063/1.2729894
- Basıldığı Şehir: Vienna
- Basıldığı Ülke: Avusturya
- Sayfa Sayıları: ss.315-316
- Orta Doğu Teknik Üniversitesi Adresli: Hayır
Özet
We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.