Analytical and computational methods for symmetric thin films bonded to graded substrate

Cebeci M., TOKTAŞ S. E., BALCİ M. N., DAĞ S.

Mechanics of Advanced Materials and Structures, cilt.33, sa.1, 2026 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 1
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1080/15376494.2026.2727076
  • Dergi Adı: Mechanics of Advanced Materials and Structures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC, DIALNET, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
  • Anahtar Kelimeler: finite element analysis, functionally graded materials, interfacial shear stress, singular integral equations, stress intensity factors, Symmetric thin films
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Analytical and computational methods are used to perform stress analyses for an advanced material architecture comprising symmetric thin films bonded to a graded half-plane. The thin films are assumed to be perfectly bonded to the substrate. The governing partial differential equations are derived in terms of an inhomogeneity parameter based on the theory of elasticity. To address this problem, Fourier sine and cosine transformations are employed to derive a singular integral equation. Parametric analysis reveals that compared to studies on the single-film model in the literature, the presence of an adjacent symmetric thin film significantly affects the interfacial shear stress, normal stress in the thin films, and lateral stress in the graded half-plane. Additionally, the study conducts a detailed investigation into the effects of symmetric thin-film spacing, graded substrate inhomogeneity parameter, and substrate-to-film stiffness ratio under two distinct loading scenarios. Furthermore, the finite element method is employed as a computational approach by using the general-purpose engineering simulation software, ANSYS. Comparisons among the different stress components demonstrate that the proposed analytical and numerical methods exhibit a high degree of accuracy and reliability.