Genetic Algorithm Application to the Structural Properties of Si-Ge Mixed Clusters


Dugan N., ERKOÇ Ş.

MATERIALS AND MANUFACTURING PROCESSES, vol.24, no.3, pp.250-254, 2009 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 24 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1080/10426910802675830
  • Journal Name: MATERIALS AND MANUFACTURING PROCESSES
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.250-254

Abstract

Optimum geometries of silicon-germanium (Si-Ge) clusters are found using a single parent genetic algorithm. 100 atom and 150 atom clusters are studied with some variety of compositions and initial geometries. Total interaction energies, distances of Si and Ge atoms to the cluster centers, and average bond lengths are calculated. Si-core Ge-shell geometry is found to be favorable compared to other geometries.