Genetic Algorithm Application to the Structural Properties of Si-Ge Mixed Clusters

Dugan N., ERKOÇ Ş.

MATERIALS AND MANUFACTURING PROCESSES, cilt.24, sa.3, ss.250-254, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 24 Sayı: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1080/10426910802675830
  • Dergi Adı: MATERIALS AND MANUFACTURING PROCESSES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.250-254
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Optimum geometries of silicon-germanium (Si-Ge) clusters are found using a single parent genetic algorithm. 100 atom and 150 atom clusters are studied with some variety of compositions and initial geometries. Total interaction energies, distances of Si and Ge atoms to the cluster centers, and average bond lengths are calculated. Si-core Ge-shell geometry is found to be favorable compared to other geometries.