There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also eliminates the need for yield lowering substrate thinning process in hybrid integration. While the large lattice mismatch between Si and these materials seems to be an important obstacle for growing device quality material on Si, encouraging results have been achieved recently. A review of these results and successful operation of lnSb p-i-n detectors on Si substrates are presented in this paper. The detector layers were grown by molecular beam epitaxy on GaAs coated Si substrates. Unintentionally doped InSb layers grown on semi-insulating GaAs substrates under similar growth conditions yielded a 77 K Hall mobility of 9x10(4) cm(2)/V-sec. Peak voltage responsivity of the detectors on Si substrates was higher than 10(4) V/W at 77 K with tunneling and shunt leakage limited zero-bias differential resistance. While there have been only few studies on the growth of III-V infrared detectors on Si substrates, the recent results are encouraging for decreasing the cost and increasing the yield of infrared detector systems.