Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)


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Imer B., Haskell B., Rajan S., Keller S., Mishra U. K. , Nakamura S., ...More

JOURNAL OF MATERIALS RESEARCH, vol.23, no.2, pp.551-555, 2008 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 23 Issue: 2
  • Publication Date: 2008
  • Doi Number: 10.1557/jmr.2008.0069
  • Journal Name: JOURNAL OF MATERIALS RESEARCH
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.551-555

Abstract

We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 x 10(19) cm(-3) as 261.12 cm(2)/Vs for SLEO a-GaN and 106.77 cm(2)/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was similar to 12% less than planar samples.