ELECTRON BIPRISM OPERATION OF SPLIT-GATE HETEROSTRUCTURES HAVING A SINGLE IMPURITY WITHIN THE CHANNEL

BULUTAY C., GUNALP N., TOMAK M.

JOURNAL OF APPLIED PHYSICS, cilt.76, sa.9, ss.5309-5317, 1994 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 76 Sayı: 9
  • Basım Tarihi: 1994
  • Doi Numarası: 10.1063/1.357182
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5309-5317
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

In the phase-coherent transport regime the possibility of a solid-state electron biprism employing an intentionally implanted impurity in a split-gate heterostructure is theoretically studied. The impurity-assisted interference phenomenon has been investigated under several impurity profiles and positions within the constriction. The effect of gate width on quenching the interference has also been considered. A quantitative explanation is offered which is based on the Fourier analysis of the wave function at the aperture and the guided-mode dynamics within the constriction.