ELECTRON BIPRISM OPERATION OF SPLIT-GATE HETEROSTRUCTURES HAVING A SINGLE IMPURITY WITHIN THE CHANNEL
JOURNAL OF APPLIED PHYSICS, cilt.76, sa.9, ss.5309-5317, 1994 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 76 Sayı: 9
- Basım Tarihi: 1994
- Doi Numarası: 10.1063/1.357182
- Dergi Adı: JOURNAL OF APPLIED PHYSICS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.5309-5317
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
In the phase-coherent transport regime the possibility of a solid-state electron biprism employing an intentionally implanted impurity in a split-gate heterostructure is theoretically studied. The impurity-assisted interference phenomenon has been investigated under several impurity profiles and positions within the constriction. The effect of gate width on quenching the interference has also been considered. A quantitative explanation is offered which is based on the Fourier analysis of the wave function at the aperture and the guided-mode dynamics within the constriction.