ELECTRON BIPRISM OPERATION OF SPLIT-GATE HETEROSTRUCTURES HAVING A SINGLE IMPURITY WITHIN THE CHANNEL

BULUTAY C., GUNALP N., TOMAK M.

JOURNAL OF APPLIED PHYSICS, vol.76, no.9, pp.5309-5317, 1994 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 76 Issue: 9
  • Publication Date: 1994
  • Doi Number: 10.1063/1.357182
  • Journal Name: JOURNAL OF APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5309-5317
  • Middle East Technical University Affiliated: Yes

Abstract

In the phase-coherent transport regime the possibility of a solid-state electron biprism employing an intentionally implanted impurity in a split-gate heterostructure is theoretically studied. The impurity-assisted interference phenomenon has been investigated under several impurity profiles and positions within the constriction. The effect of gate width on quenching the interference has also been considered. A quantitative explanation is offered which is based on the Fourier analysis of the wave function at the aperture and the guided-mode dynamics within the constriction.