Akademik Veri Yönetim Sistemi
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, Mustafa Kurban,Osman Barış Malcıoğlu,Şakir Erkoç, Editör, Springer, London/Berlin , Basel, ss.87-107, 2023
In this chapter, an overview of II-VI semiconductors, especially some
important ternary II-VI alloys, CdZnTe, CdHgTe, and HgZnTe, is given
with more focusing on the applications in photodetectors. In this
context, we investigate the solid-state physics of a photovoltaic device
to provide a foundation to explain various considerations of
manufacturing an II-VI-based photodetector and electronic properties
that influence the photodetection efficiency of an II-VI alloy.
Moreover, parameters which effect a photovoltaic device are discussed.
The structural properties including crystal structures and their lattice
parameters based on the composition of II-VI alloys as well as
electronic and optical properties are introduced. A literature review
related to the excellent properties of these alloys is presented to
understand why they are chosen in detector technology. The dominant
thermal diffusion current sources in II-Vis which are the Auger and
Shockley–Read–Hall processes are discussed in detail. Then, in the
following sections, we briefly focus on the applications of CdZnTe,
HgCdTe, and HgZnTe ternary II-VI alloys as a photodetector. Herein, in
addition to available detector performance of them, we give some
important properties such as the wide bandgap, high crystalline
perfection, and resistivity, which are required for improving the
radiation detector performance. Some examples, most importantly, are
given from the literature to understand how to accomplish these
requirements and what are the obstacles to getting the detectors with
desired properties. Finally, the effects of the size dimensionality on
the performance of photodetectors are given.