An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry

Chae J., Kulah H., Najafi K.

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, vol.13, no.4, pp.628-635, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 4
  • Publication Date: 2004
  • Doi Number: 10.1109/jmems.2004.832653
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.628-635
  • Keywords: inertial sensors, micromachined accelerometer, micro-g, sigma-delta, switched-capacitor, SURFACE
  • Middle East Technical University Affiliated: No


A high-sensitivity, low-noise in-plane (lateral) capacitive silicon microaccelerometer utilizing a combined surface and bulk micromachining technology is reported. The accelerometer utilizes a 0.5-mm-thick, 2.4 x 1.0 mm(2) proof-mass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof-mass by a 1.1-mum sensing gap formed using a sacrificial oxide layer. The measured device sensitivity is 5.6 pF/g. A CMOS readout circuit utilizing a switched-capacitor front-end Sigma - Delta modulator operating at 1 MHz with chopper stabilization and correlated double sampling technique, can resolve a capacitance of 10 aF over a dynamic range of 120 dB in a 1 Hz BW. The measured input referred noise floor of the accelerometer-CMOS interface circuit is 1.6mug/rootHz in atmosphere.