Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol.205, no.2, pp.537-542, 1998 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 205 Issue: 2
- Publication Date: 1998
- Doi Number: 10.1002/(sici)1521-3951(199802)205:2<537::aid-pssb537>3.0.co;2-i
- Journal Name: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.537-542
- Middle East Technical University Affiliated: Yes
Abstract
The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.