Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields

Akbas, H; Aktas, S; Okan, SE; Ulas, M; Tomak, MEHMET

doi:10.1002/(sici)1521-3951(199802)205:2<537::aid-pssb537>3.0.co;2-i

Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields

Akbas H., Aktas S., Okan S., Ulas M., Tomak M.

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, cilt.205, sa.2, ss.537-542, 1998 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 205 Sayı: 2
Basım Tarihi: 1998
Doi Numarası: 10.1002/(sici)1521-3951(199802)205:2<537::aid-pssb537>3.0.co;2-i
Dergi Adı: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.537-542
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.