Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor

ANUTGAN T., ANUTGAN M., Atilgan I., Katircioglu B.

THIN SOLID FILMS, cilt.519, sa.11, ss.3914-3921, 2011 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 519 Konu: 11
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.tsf.2011.01.284
  • Sayfa Sayıları: ss.3914-3921


The capacitance-voltage (C-V) measurements within 10(6)-10(-2) Hz frequency range were performed on the hydrogenated nanocrystalline silicon (nc-Si:H) bottom-gate thin film transistor (TFT) and metal-insulator-amorphous silicon (MIAS) structure, mechanically isolated from the same TFT. It was found that the conducting thin layer in nc-Si:H film expands the effective capacitor area beyond the electrode in the TFT structure, which complicates its C-V curves. Considering the TFT capacitance-frequency (C-F) curves, the equivalent circuit of the TFT structure was proposed and mechanism for this area expansion was discussed. On the other hand, the MIAS C-F curves were fitted by the equivalent circuit models to deduce its electrical properties. nc-Si:H neutral bulk effect was revealed by the dependence of the MIAS capacitance on frequency within 10(6)-10(3) Hz at both accumulation and depletion regimes. The inversion in MIAS was detected at 10(2)-10(-2) Hz for relatively low negative gate bias without any external activation source. The presence of the ac hopping conductivity in the nc-Si:H film was inferred from the fitting. In addition, the density of the interface traps and its energy distribution were determined. (C) 2011 Elsevier B.V. All rights reserved.