An infrared FPA readout circuit based on Current Mirroring Integration

Kulah H. , Akin T.

Infrared Technology and Applications XXV Conference, Florida, United States Of America, 5 - 09 April 1999, vol.3698, pp.778-788 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 3698
  • Doi Number: 10.1117/12.354578
  • City: Florida
  • Country: United States Of America
  • Page Numbers: pp.778-788


This paper reports an improved Current Mirroring Integration (CMI) unit cell and a new readout structure based on it. The new structure combines the benefits of the Current Mirroring Direct Injection (CMDI) and Switch Current Integration (SCI) structures, satisfying the requirements for the high resolution and high performance infrared FPA readouts. The improved CMI readout circuit provides very high injection efficiency (almost 100%), almost-zero detector bias, and large dynamic range (almost rail-to-rail), while it can be implemented in a small pixel area. The circuit provides a maximum charge storage capacity of 5.25x10(7) electrons and a maximum transimpedance of 6x10(7) Omega for a 5V power supply and a 2pF integration capacitance, which is placed outside the unit cell. The unit cell employs only nine MOS transistors and occupies an area of 20 mu m x 25 mu m in a 0.8 mu m CMOS process.