An infrared FPA readout circuit based on Current Mirroring Integration

Kulah H., Akin T.

Infrared Technology and Applications XXV Conference, Florida, Amerika Birleşik Devletleri, 5 - 09 Nisan 1999, cilt.3698, ss.778-788 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 3698
  • Doi Numarası: 10.1117/12.354578
  • Basıldığı Şehir: Florida
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.778-788
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

This paper reports an improved Current Mirroring Integration (CMI) unit cell and a new readout structure based on it. The new structure combines the benefits of the Current Mirroring Direct Injection (CMDI) and Switch Current Integration (SCI) structures, satisfying the requirements for the high resolution and high performance infrared FPA readouts. The improved CMI readout circuit provides very high injection efficiency (almost 100%), almost-zero detector bias, and large dynamic range (almost rail-to-rail), while it can be implemented in a small pixel area. The circuit provides a maximum charge storage capacity of 5.25x10(7) electrons and a maximum transimpedance of 6x10(7) Omega for a 5V power supply and a 2pF integration capacitance, which is placed outside the unit cell. The unit cell employs only nine MOS transistors and occupies an area of 20 mu m x 25 mu m in a 0.8 mu m CMOS process.