Electrical crosstalk suppression for mesa-based in-device passivated InGaAs photodetectors

Çırçır K., Kocaman S.

INFRARED PHYSICS & TECHNOLOGY, vol.127, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 127
  • Publication Date: 2022
  • Doi Number: 10.1016/j.infrared.2022.104355
  • Journal Name: INFRARED PHYSICS & TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC
  • Keywords: Short wavelength infrared, InGaAs, InP, Photodetector, Planar and mesa type, In-device passivation, Dark current reduction, Crosstalk suppression, HGCDTE, PHOTODIODE, IN0.53GA0.47AS, LAYER, ARRAY
  • Middle East Technical University Affiliated: Yes

Abstract

Inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs photodetectors provides a lower dark current than the conventional mesa type structures. However, due to the high electric field in the passivation layer between the pixels, improved dark current characteristics come with increased electrical crosstalk. Manipulating the electrical field distribution with an additional thin epilayer promises to reduce this inter-pixel carrier collection without disturbing the primary aim of the passivation layer, which is to reduce the dark current through the depleted condition. An experimental-like scanning demonstration with a five-pixel mini array numerically shows a significant decrease in electrical crosstalk together with an increase in photo-response.