Perturbation analysis of sheath evolution, with application to plasma source ion implantation


Bektursunova R., Demokan O.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.34, no.3, pp.326-329, 2001 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 34 Issue: 3
  • Publication Date: 2001
  • Doi Number: 10.1088/0022-3727/34/3/313
  • Title of Journal : JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Page Numbers: pp.326-329

Abstract

A perturbation model has been developed to describe the evolution of an expanding plasma sheath around a cathode after a high-voltage negative pulse is applied to the cathode, simulating the conditions in devices such as those used for plasma source ion implantation. The set of governing equations consists of two coupled collisionless fluid equations for ions, and Poisson's equation and Boltzmann's assumption for electrons. The time-dependent, self-consistent expressions for the potential, ion density and ion flux are obtained and compared successfully with experimental and simulation results.