A High Linearity Wide Bandwidth GSM/WCDMA/LTE Base Station LNA MMIC with Ultra Low Noise Figure

Memioglu O., Gundel A.

18th Mediterranean Microwave Symposium (MMS), İstanbul, Turkey, 31 October - 02 November 2018, pp.198-201 identifier

  • Publication Type: Conference Paper / Full Text
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.198-201
  • Keywords: Low-noise amplifier (LNA), high linearity, wireless infrastructure, pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC)
  • Middle East Technical University Affiliated: Yes


This paper presents a high linearity wide bandwidth low noise amplifier (LNA) MMIC with excellent noise figure. The amplifier topology is compromised of a single-stage cascode topology with inductive source degeneration of common-source device. This amplifier topology seems an attractive choice for applications requiring wide bandwidth, high gain, and high linearity. The design targets 700-900 MHz, 1700-2200 MHz, and 2500-2800 MHz frequency bands for GSM/WCDMA/LTE base station receiver applications. A single-stage amplifier is implemented in a high performance 0.25um InGaAs E/D-mode pHEMT technology and demonstrates a high gain and an excellent bandwidth along with a high-linearity. Additionally, an excellent noise performance is achieved demonstrating <0.6 dB noise figure in 700-900 MHz frequency band while exhibiting < 0.75 dB noise figure in 1700-2200 MHz frequency band. A single-stage amplifier provides 20 dB of small-signal gain with excellent linearity of output OIP3 >= +32.0 dBm while requiring only 45 mA from a +5V supply.