Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices

Yilmaz K., PARLAK M. , Ercelebi C.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.22, sa.12, ss.1268-1271, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 22 Konu: 12
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1088/0268-1242/22/12/004
  • Sayfa Sayıları: ss.1268-1271


In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost ohmic non-rectifying behaviors for all samples. The ideality factor and barrier height values with the Ag contact were found to be 2 and 0.7 eV, respectively.