Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices

Yilmaz K., PARLAK M., Ercelebi C.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.22, no.12, pp.1268-1271, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 12
  • Publication Date: 2007
  • Doi Number: 10.1088/0268-1242/22/12/004
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1268-1271
  • Middle East Technical University Affiliated: Yes


In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost ohmic non-rectifying behaviors for all samples. The ideality factor and barrier height values with the Ag contact were found to be 2 and 0.7 eV, respectively.