MoOx/Ag/MoOx multilayers as hole transport transparent conductive electrodes for n-type crystalline silicon solar cells


Akdemir O., Borra M. Z. , Nasser H., TURAN R., BEK A.

INTERNATIONAL JOURNAL OF ENERGY RESEARCH, vol.44, no.4, pp.3098-3109, 2020 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 44 Issue: 4
  • Publication Date: 2020
  • Doi Number: 10.1002/er.5145
  • Journal Name: INTERNATIONAL JOURNAL OF ENERGY RESEARCH
  • Journal Indexes: Science Citation Index Expanded, Scopus, Academic Search Premier, PASCAL, Aerospace Database, Agricultural & Environmental Science Database, Aquatic Science & Fisheries Abstracts (ASFA), Communication Abstracts, Compendex, Environment Index, INSPEC, Metadex, Pollution Abstracts, Civil Engineering Abstracts
  • Page Numbers: pp.3098-3109
  • Keywords: hole selective contact, molybdenum trioxide, transparent conductive electrode, crystalline silicon solar cell, DOPANT-FREE, SELECTIVE CONTACTS, MOLYBDENUM OXIDE, WORK FUNCTION, PERFORMANCE, SIMULATION

Abstract

Substitution of highly doped layers with conventional transparent conductive electrodes as carrier collecting and selective contacts in conventional crystalline silicon (c-Si) solar cell configurations is crucial in increasing affordability of solar cells by lowering material costs. In this study, oxide/metal/oxide (OMO) multilayers featuring molybdenum oxide (MoOx) and silver (Ag) thin films are developed by thermal evaporation technique, as dopant-free hole transport transparent conductive electrodes (HTTCEs) for n-type c-Si solar cells. Semidopant-free asymmetric heterocontact (semi-DASH) solar cells on n-type c-Si utilizing OMO multilayers are fabricated. The effect of outer MoOx layer thickness and Ag deposition rate on the photovoltaic characteristics of the fabricated semi-DASH solar cells are investigated. A comparison of front side pyramid textured and flat surface solar cells is performed to optimize the optical and electrical properties. Highest efficiency of 9.3% +/- 0.2% is achieved in a pyramid textured semi-DASH c-Si solar cell with 15/10/30 nm of HTTCE structure.