Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

Genc M., Sheremet V., Elci M., KASAPOĞLU A. E., ALTUNTAŞ İ., DEMİR İ., ...More

SUPERLATTICES AND MICROSTRUCTURES, vol.128, pp.9-13, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 128
  • Publication Date: 2019
  • Doi Number: 10.1016/j.spmi.2019.01.008
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.9-13
  • Keywords: Light emitting diodes, Luminescence, LED performance, Current distribution, LIGHT-EMITTING-DIODES
  • Middle East Technical University Affiliated: No


This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.