Active Surface Passivation for mesa type short-wave infrared InGaAs Photodetectors

Işık N., KOCAMAN S.

INFRARED PHYSICS & TECHNOLOGY, vol.143, 2024 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 143
  • Publication Date: 2024
  • Doi Number: 10.1016/j.infrared.2024.105590
  • Journal Name: INFRARED PHYSICS & TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC
  • Keywords: Active surface passivation, Dark current suppression, Gated photodetector, GR current suppression, Surface GR, Surface passivation SWIR, SWIR InGaAs
  • Middle East Technical University Affiliated: Yes

Abstract

We propose a gate-controlled device structure for mesa-type infrared photon detectors with the means of improving surface conditions. Additional terminal added to the pn-junction allows surface charges to be manipulated by applying a constant E-field through a metal-oxide-semiconductor (MOS) structure. Shortwave infrared (SWIR) Indium Gallium Arsenide (InGaAs) sample with a cut-off wavelength of 1.69 mu m is characterized. A theoretical framework is provided to gating mechanism. Experimental results show that, the shunt component of the dark current improved as high as 63% by interrupting the channel formation on the surface. Further improvements in the generation-recombination (GR) current is noted at more than 90% at 300 K. The effective GR lifetime of 20 mu s is obtained under 50 V/mu m surface-gate bias.