SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS

TURAN R., AKMAN N.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.8, sa.11, ss.1999-2002, 1993 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8 Sayı: 11
  • Basım Tarihi: 1993
  • Doi Numarası: 10.1088/0268-1242/8/11/010
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1999-2002
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K. In most cases samples showed near ideal I-V characteristics. The transition from Cr-Si to CrSi2-Si upon annealing at 440-degrees-C was observed from the variation of the barrier height. The barrier height and the ideality factor were found to be temperature independent for p-type samples. The deviations from the ideality in n-type samples are discussed in terms of the current mechanisms that might contribute to the total measured value.