SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS


TURAN R. , AKMAN N.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.8, no.11, pp.1999-2002, 1993 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 8 Issue: 11
  • Publication Date: 1993
  • Doi Number: 10.1088/0268-1242/8/11/010
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.1999-2002

Abstract

The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K. In most cases samples showed near ideal I-V characteristics. The transition from Cr-Si to CrSi2-Si upon annealing at 440-degrees-C was observed from the variation of the barrier height. The barrier height and the ideality factor were found to be temperature independent for p-type samples. The deviations from the ideality in n-type samples are discussed in terms of the current mechanisms that might contribute to the total measured value.