Transition metal dichalcogenides (TMDCs) of group -VIB (MX2, M = Mo, W; X = S, Se, Te, etc.) with sizeable bandgap exhibit different interesting physical and chemical properties which open up new avenues to their technological applications. However, refinement and expansion of growth of TMDCs are required to realize commercializable products and to bring these technological applications to consumer's market. Here, we present growth of MoS2 catalyst by ambient pressure chemical vapor deposition (CVD). A Pt foil substrate was used to grow MoO2 TMDC from the reaction at high temperature (similar to 800 degrees C) between molybdenum trioxide (MoO3) and sulfur (S) in the presence of argon flow. The area coverage of 4 cm(2) of MoS2 layers was achieved on the Pt substrate, which is promising for application requiring large area coverage. The Pt foil was reusable in subsequent growth experiments although there was signature of surface sulphurization that occurred due to elevated temperature needed in the growth process. To confirm the growth of MoS2, Raman spectroscopy was performed. The frequency difference between the featured modes (E2g(1) at 384.7 cm(-1) and A(1g) at 409.3 cm(-1)) of MoS2 was 24.6 cm(-1), which confirmed the multilayer growth of MoS2 on Pt surface. The chemical composition of the asgrown MoS2 film was obtained by X-ray photoelectron spectroscopy (XPS): Mo 3d and S 2s doublets were observed which supported MoS2 formation.