Current transport mechanisms in low resistive CdS thin films


Gunal I. , Parlak M.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.8, ss.9-13, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 8 Konu: 1
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1023/a:1018540601482
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Sayfa Sayıları: ss.9-13

Özet

The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott's hopping process appears to be the predominant conduction mechanism.