Dependence of energy levels and optical transitions on layer thicknesses in InSe/GaSe superlattices


Erkoc S., Katircioglu S.

JOURNAL OF CRYSTAL GROWTH, vol.194, pp.331-335, 1998 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 194
  • Publication Date: 1998
  • Doi Number: 10.1016/s0022-0248(98)00686-1
  • Journal Name: JOURNAL OF CRYSTAL GROWTH
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.331-335
  • Keywords: superlattices, heterostructures, optical properties, gallium selenide, SEMICONDUCTORS GASE, INSE

Abstract

We have investigated the dependence of energy levels and optical transition matrix elements in InSe/GaSe superlattices on well and/or barrier widths. Self-consistent-field calculations have been performed within the effective-mass theory approximation. (C) 1998 Elsevier Science B.V. All rights reserved.