Extended wavelength SWIR In GaAs focal plane array: Characteristics and limitations


Arslan Y., Oguz F., BEŞİKCİ C.

INFRARED PHYSICS & TECHNOLOGY, vol.70, pp.134-137, 2015 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 70
  • Publication Date: 2015
  • Doi Number: 10.1016/j.infrared.2014.10.012
  • Journal Name: INFRARED PHYSICS & TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.134-137
  • Keywords: InGaAs, Photodetector, Short wavelength infrared, INGAAS, PHOTODIODES

Abstract

We present the characteristics of large format (640 x 512) short wavelength infrared (SWIR) InGaAs photodetector focal plane array (FPA) with similar to 2.65 mu m room temperature cut-off wavelength. The detector epilayers were grown with solid source molecular beam epitaxy on InP substrates using a linearly graded InALAs buffer layer. In spite of the large lattice mismatch, the FPA yields reasonably good responsivity nonuniformity (9%) with a pixel detectivity above 2 x 10(10) cm Hz(1/2)/W at room temperature. The dark current of the pixels are dominated by generation-recombination (G-R) and shunt leakage mechanisms with negligible tunneling above 200 K up to a reverse bias voltage of 3 V. The results are very encouraging for further study toward the optimization of the epilayer structure and growth conditions in order to provide a lower cost technology alternative to HgCdTe in the SWIR band. (C) 2014 Elsevier B.V. All rights reserved.