We present the characteristics of large format (640 x 512) short wavelength infrared (SWIR) InGaAs photodetector focal plane array (FPA) with similar to 2.65 mu m room temperature cut-off wavelength. The detector epilayers were grown with solid source molecular beam epitaxy on InP substrates using a linearly graded InALAs buffer layer. In spite of the large lattice mismatch, the FPA yields reasonably good responsivity nonuniformity (9%) with a pixel detectivity above 2 x 10(10) cm Hz(1/2)/W at room temperature. The dark current of the pixels are dominated by generation-recombination (G-R) and shunt leakage mechanisms with negligible tunneling above 200 K up to a reverse bias voltage of 3 V. The results are very encouraging for further study toward the optimization of the epilayer structure and growth conditions in order to provide a lower cost technology alternative to HgCdTe in the SWIR band. (C) 2014 Elsevier B.V. All rights reserved.