Development of X-Band Transceiver MMIC's Using GaN Technology

Memioglu O., Kazan O., Turan I., Karakuzulu A., Gundel A., Kocer F., ...Daha Fazla

ADVANCED ELECTROMAGNETICS, cilt.8, ss.1-9, 2019 (ESCI) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8
  • Basım Tarihi: 2019
  • Doi Numarası: 10.7716/aem.v8i2.1012
  • Dergi Adı: ADVANCED ELECTROMAGNETICS
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus
  • Sayfa Sayıları: ss.1-9
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/ receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain. Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.