Development of X-Band Transceiver MMIC's Using GaN Technology

Memioglu O., Kazan O., Turan I., Karakuzulu A., Gundel A., Kocer F., ...More

ADVANCED ELECTROMAGNETICS, vol.8, pp.1-9, 2019 (ESCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 8
  • Publication Date: 2019
  • Doi Number: 10.7716/aem.v8i2.1012
  • Journal Name: ADVANCED ELECTROMAGNETICS
  • Journal Indexes: Emerging Sources Citation Index (ESCI), Scopus
  • Page Numbers: pp.1-9
  • Middle East Technical University Affiliated: Yes

Abstract

This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/ receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain. Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.