Development of X-Band Transceiver MMIC's Using GaN Technology
ADVANCED ELECTROMAGNETICS, vol.8, pp.1-9, 2019 (ESCI, Scopus)
- Publication Type: Article / Article
- Volume: 8
- Publication Date: 2019
- Doi Number: 10.7716/aem.v8i2.1012
- Journal Name: ADVANCED ELECTROMAGNETICS
- Journal Indexes: Emerging Sources Citation Index (ESCI), Scopus
- Page Numbers: pp.1-9
- Middle East Technical University Affiliated: Yes
Abstract
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/ receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain. Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.