Development of AZO TCOs with ALD for HEMT and HJSC solar cell applications


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Tugrul D., Cakmak H., Özbay E., Imer M. B.

International Conference on Advanced Materials Science & Engineering and High Tech Device Applications - ICMATSE, Ankara, Turkey, 2 - 04 October 2020, vol.1, no.1, pp.54-55

  • Publication Type: Conference Paper / Summary Text
  • Volume: 1
  • City: Ankara
  • Country: Turkey
  • Page Numbers: pp.54-55

Abstract

Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. These films can be produced with solid, liquid and vapor phase deposition techniques. Generally, metal oxides such as CdO, In2O3, SnO2, Ga2O3 and ZnO can be used in these structures as intrinsic or extrinsic semiconductors. Purpose of this study is to reproduce widely studied Aluminium doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) and optimize the doping concentration, electrical and optical properties, thickness for (n+) a-Si:H surface of silicon heterojunction solar cells (HJSCs) and high electron mobility transistor (HEMT) applications. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance (1.57x10-3 ohm.cm) and good mobility (10.69 cm2/V.s).