Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix


Wang J., Righini M., Gnoli A., Foss S., Finstad T., Serincan U., ...Daha Fazla

SOLID STATE COMMUNICATIONS, cilt.147, ss.461-464, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 147
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.ssc.2008.07.011
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Sayfa Sayıları: ss.461-464

Özet

Temperature and size dependence of photoluminescence (PL) of nano-silicon embedded in SiO2 matrix samples were studied. In these measurements, four samples with deferent implantation dose showed their similar tendency. Their nano-structure was investigated by high resolution electron microscopy (HREM) and selected area diffraction (SAD) which confirmed that only those prepared with the higher Si implantation dose formed crystal nano-silicon. The further analysis of the dependence of thermal activation energy on the PL emission energy demonstrates their different behaviors. This leads to an optical method to detect the crystal nano-silicon through comparing their thermal activation energy with the Calcott model, a model that implies the emission from nanocrystallites. Furthermore, the appearance of thermal activation energy in amorphous nano-silicon is discussed in the light of recombination mode of localized carriers through the band-tail state. (C) 2008 Elsevier Ltd. All rights reserved.