Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy


Behn U., Misra P., Grahn H. T. , Imer B. , Nakamura S., DenBaars S. P. , ...Daha Fazla

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.204, ss.299-303, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 204 Konu: 1
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1002/pssa.200673539
  • Dergi Adı: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  • Sayfa Sayıları: ss.299-303

Özet

We have used polarized photoreflectance spectroscopy to study the electronic-band-structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. For nonpolar oriented films, the c-axis of GaN lies in the film plane. An unstrained, high-quality C-plane GaN film is used to estimate the difference in the band gap energies between 10 K and room temperature. We use the crystal-field and spin-orbit splitting energies and the deformation potential D, determined at low temperatures to calculate the transition energies and the polarization properties of nonpolar oriented films at room temperature using the k-p perturbation approach. The calculated transition energies and oscillator strengths are then compared to the experimentally obtained values. (c) 2007 WELEY-VCH Verlag GmbH & Co. KGaA, Weinheim.