A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

Takaloo A. V., Joo S. K., ES F., TURAN R., LEE D. W.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, cilt.72, sa.5, ss.615-621, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 72 Sayı: 5
  • Basım Tarihi: 2018
  • Doi Numarası: 10.3938/jkps.72.615
  • Dergi Adı: JOURNAL OF THE KOREAN PHYSICAL SOCIETY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.615-621
  • Anahtar Kelimeler: Nickel, Materials Characterization, Light Induced Plating, X-ray Diffraction, Photovoltaics, CONTACT RESISTANCE, NICKEL, METALLIZATION, FILMS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Light-induced electroless plating (LIEP) is an easy and inexpensive method that has been widely used for seed layer deposition of Nickel/Copper (Ni/Cu)-based metallization in the solar cell. In this study, material characterization aspects of the Ni seed layer and Ni silicide formation at different bath conditions and annealing temperatures on the n-side of a silicon diode structure have been examined to achieve the optimum cell contacts. The effects of morphology and chemical composition of Ni film on its electrical conductivity were evaluated and described by a quantum mechanical model. It has been found that correlation exists between the theoretical and experimental conductivity of Ni film. Residual stress and phase transformation of Ni silicide as a function of annealing temperature were evaluated using Raman and XRD techniques. Finally, transmission line measurement (TLM) technique was employed to determine the contact resistance of Ni/Si stack after thermal treatment and to understand its correlation with the chemical-structural properties. Results indicated that low electrical resistive mono-silicide (NiSi) phase as low as 5 m Omega.cm(2) was obtained.