Thin-film transistors based on poly, (3,3 '''-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability

Vieira S. M. C., Hsieh G., ÜNALAN H. E., Dag S., Amaratunga G. A. J., Milne W. I.

APPLIED PHYSICS LETTERS, vol.98, no.10, 2011 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 98 Issue: 10
  • Publication Date: 2011
  • Doi Number: 10.1063/1.3560982
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Middle East Technical University Affiliated: Yes

Abstract

The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly (3,3'''-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2 x 10(-4) cm(2)/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3 x 10(-5) cm(2)/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560982]