Thin-film transistors based on poly, (3,3 '''-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability


Vieira S. M. C. , Hsieh G., ÜNALAN H. E. , Dag S., Amaratunga G. A. J. , Milne W. I.

APPLIED PHYSICS LETTERS, vol.98, no.10, 2011 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 98 Issue: 10
  • Publication Date: 2011
  • Doi Number: 10.1063/1.3560982
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded, Scopus

Abstract

The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly (3,3'''-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2 x 10(-4) cm(2)/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3 x 10(-5) cm(2)/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560982]