Thin-film transistors based on poly, (3,3 '''-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability
APPLIED PHYSICS LETTERS, cilt.98, sa.10, 2011 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 98 Sayı: 10
- Basım Tarihi: 2011
- Doi Numarası: 10.1063/1.3560982
- Dergi Adı: APPLIED PHYSICS LETTERS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly (3,3'''-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2 x 10(-4) cm(2)/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3 x 10(-5) cm(2)/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560982]